FDP054N10 Fairchild Semiconductor, FDP054N10 Datasheet - Page 4

• Manufacturer Part Number: FDP054N10
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP054N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 203nC @ 10V
• Input Capacitance (ciss) @ Vds: 13280pF @ 25V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP054N10 Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1000
0.01
100
0.1
1.2
1.1
1.0
0.9
0.8
10
1
-80
0.1
Operation in This Area
is Limited by R
-40
vs. Temperature
T
V
J
, Junction Temperature
DS
0
, Drain-Source Voltage [V]
0.001
1
0.01
DS(on)
0.1
1
10
*Notes:
40
1. T
2. T
3. Single Pulse
0.02
0.01
0.05
-5
0.2
0.1
0.5
Single pulse
C
J
= 175
= 25
80
10
o
C
o
C
Figure 11. Transient Thermal Response Curve
10
120
* Notes :
-4
1. V
2. I
[
o
100
1ms
10ms
C
DC
D
GS
]
= 10mA
160
μ
10
s
= 0V
100
μ
s
Rectangular Pulse Duration [sec]
10
200
200
-3
(Continued)
10
-2
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
150
100
2.4
2.0
1.6
1.2
0.8
0.4
50
10
0
* Notes :
-80
25
1. Z
2. Duty Factor, D=t
3. T
P
-1
DM
Limitted by package
θ
JM
JC
-40
(t) = 0.57
- T
vs. Temperature
50
vs. Case Temperature
C
T
T
t
= P
J
1
C
, Junction Temperature
t
, Case Temperature
2
1
DM
0
o
C/W Max.
75
* Z
1
/t
θ
2
JC
40
(t)
100
10
80
125
[
120
o
C
* Notes :
[
]
1. V
2. I
o
C
www.fairchildsemi.com
D
]
150
GS
160
= 75A
= 10V
200
175