FQA24N50_F109 Fairchild Semiconductor, FQA24N50_F109 Datasheet - Page 3

• Manufacturer Part Number: FQA24N50_F109
• Description: MOSFET N-CH 500V 24A TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQA24N50_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 290W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.156 Ohms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 24 A
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 90 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
7000
6000
5000
4000
3000
2000
1000
10
10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0
10
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
20
GS
V
V
DS
DS
40
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
iss
oss
rss
60
V
GS
= 20V
V
GS
= 10V
80
C
C
C
※ Notes :
iss
oss
rss
1. 250 μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
1
C
1
gs
gd
= 25 ℃
ds
+ C
+ C
※ Notes :
100
1. V
2. f = 1 MHz
gd
gd
(C
GS
J
ds
= 25℃
= 0 V
= shorted)
120
10
10
10
10
10
10
12
10
-1
1
0
-1
8
6
4
2
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
150℃
0.4
Variation with Source Current
20
25℃
150℃
0.6
4
25℃
V
V
and Temperature
GS
SD
Q
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
0.8
40
V
1.0
DS
6
V
DS
V
= 400V
DS
= 250V
-55℃
= 100V
60
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
8
DS
GS
= 50V
= 0V
80
D
= 24 A
1.6
Rev. A2, September 2001
100
1.8
10