FCH47N60_F133 Fairchild Semiconductor, FCH47N60_F133 Datasheet - Page 3

• Manufacturer Part Number: FCH47N60_F133
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCH47N60_F133

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 8000pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH47N60_F133 Rev. A.
Typical Performance Characteristics
30000
25000
20000
15000
10000
0.20
0.15
0.10
0.05
0.00
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
10
10
10
5000
Figure 1. On-Region Characteristics
2
1
0
10
0
0
10
-1
Drain Current and Gate Voltage
-1
Top :
Bottom : 5.5 V
20
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
40
V
C
DS
V
60
rss
C
DS
, Drain-Source Voltage [V]
C
iss
, Drain-Source Voltage [V]
I
oss
10
D
10
, Drain Current [A]
0
80
0
100
V
120
GS
= 10V
C
C
C
140
iss
oss
rss
※
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
Notes :
10
※
gs
1
ds
gd
C
+ C
+ C
1
V
Note : T
= 25 ℃
160
GS
gd
gd
= 20V
(C
※
1. V
2. f = 1 MHz
ds
J
Notes :
= 25 ℃
= shorted)
180
GS
= 0 V
200
3
10
10
10
10
10
10
12
10
Figure 2. Transfer Characteristics
2
1
0
8
6
4
2
0
Figure 4. Body Diode Forward Voltage
2
1
0
0.2
Figure 6. Gate Charge Characteristics
2
0
Variation vs. Source Current
0.4
50
150 ℃
4
25 ℃
V
V
and Temperatue
0.6
GS
SD
Q
150 ℃
G
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
25 ℃
100
0.8
V
DS
V
DS
= 400V
6
V
= 250V
DS
-55 ℃
1.0
= 100V
150
※
※
1.2
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
Note
Notes :
※
8
DS
GS
Note : I
200
= 40V
= 0V
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1.4
D
= 47A
250
1.6
10