IRFHS9301TRPBF International Rectifier, IRFHS9301TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFHS9301TRPBF
• Description: MOSFET P-CH 30V 6A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9301TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 13 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
.
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
R
R
R
R
Static @ T
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
SD
θJC
θJC
θJA
θJA
g
g
gs
gd
rr
R
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
2
GS(th)
DSS
θ
DSS
(Bottom)
(Top)
is measured at T
/ΔT
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
= 25°C (unless otherwise specified)
J
Parameter
of approximately 90°C.
™
Parameter
Parameter
g
g
f
f
Min.
Min.
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
9.3
Typ.
Typ.
0.02
–––
-1.8
-4.8
–––
–––
–––
–––
–––
580
125
–––
–––
–––
110
6.9
2.1
3.9
30
52
13
17
12
80
13
25
79
30
-8.5
Max.
Max.
Typ.
–––
–––
–––
-150
-100
–––
–––
-2.4
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.2
170
-52
37
65
45
d
mV/°C
Units
Units
V/°C
mΩ
μA
nA
nC
nC
nC
pF
ns
ns
V
Ω
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 19a & 19b
V
V
ƒ = 1.0KHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 280/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
GS
DS
= -7.8A
= -7.8A
= 25°C, I
= 25°C, I
= 2.0Ω
= V
= -24V, V
= -24V, V
= -10V, I
= -15V,V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Max.
, I
13
90
60
42
D
Conditions
Conditions
D
S
F
= -250μA
D
D
GS
= -25μA
D
GS
GS
= -7.8A, V
= -7.8A, V
GS
e
= -7.8A
= -7.8A
= -6.2A
= -4.5V,I
= 0V
= 0V, T
= -4.5V
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D
= -1mA
e
e
DD
J
GS
D
e
G
= 125°C
= - 7.8A
= -15V
Units
°C/W
= 0V
e
D
S