STD5N52K3 STMicroelectronics, STD5N52K3 Datasheet - Page 9
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STD5N52K3
Manufacturer Part Number
STD5N52K3
Description
MOSFET N-CH 525V 4.4A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet
1.STP5N52K3.pdf
(23 pages)
Specifications of STD5N52K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
525V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
545pF @ 100V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10957-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD5N52K3
Manufacturer:
ST
Quantity:
20 000
STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 16952 Rev 2
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/23
G
DD
DD