STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet - Page 6

• Manufacturer Part Number: STL17N3LLH6
• Description: MOSFET N-CH 30V 17A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL17N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (3.3 x 3.3)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0038 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10880-2

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
0.01
100
0.1
BV
(A)
10
I
(norm)
D
1.06
1.04
0.96
0.94
0.92
1
1.02
1.00
0.98
250
200
150
100
0.1
(A)
DSS
50
I
D
0
-50
0
V
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
GS
-25
=10V
1
I
D
0
1
=1mA
2
25
50
3
VDSS
6V
10
Tj=150°C
Tc=25°C
Single pulse
75
4
vs temperature
100
5
V
125
DS
4V
3V
5V
(V)
Doc ID 15535 Rev 3
V
100ms
10ms
1s
AM08217v1
AM08220v1
AM08218v1
DS
T
(V)
J
(°C)
Figure 3.
Figure 5.
Figure 7.
10
10
10
R
10
DS(on)
K
200
100
-1
150
-3
-2
(A)
(Ω)
50
I
4.6
4.4
4.2
4.0
4.8
3.8
-3
D
0
0.2
δ=0.5
0.1
Single pulse
0
0
10
Thermal impedance
Transfer characteristics
Static drain-source on resistance
5
-2
0.01
1
10
10
-1
2
0.02
V
15
GS
10
0.05
=10V
0
3
20
Zth_powerflat_3.3x3.3
10
25
1
4
10
30
STL17N3LLH6
2
5
35
t
p
(s)
AM08219v1
AM08221v1
V
I
D
GS
(A)
(V)