STD8NM50N STMicroelectronics, STD8NM50N Datasheet - Page 7

• Manufacturer Part Number: STD8NM50N
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD8NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 50V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10958-2

STD8NM50N, STF8NM50N, STP8NM50N, STF8NM50N
Figure 8.
Figure 10. Static drain-source on resistance
Figure 12. Capacitance variations
R
DS(on)
1000
0.74
0.69
0.75
0.73
0.71
0.77
0.76
0.72
(pF)
(A)
(Ω)
0.7
100
10
I
C
D
8
4
2
10
6
0
0
1
0
0
Output characteristics
V
V
GS
1
GS
10
=10V
1
=10V
2
6V
20
10
3
7V
4
30
100
Crss
Ciss
Coss
5V
5
V
V
I
DS
D
DS
(A)
(V)
AM07917v1
AM07919v1
AM07921v1
(V)
Doc ID 17413 Rev 2
Figure 9.
Figure 11. Gate charge vs gate-source voltage
Figure 13. Coss stored energy vs V
V
(V)
(A)
(µJ)
12
10
I
GS
10
D
E
0
6
2
8
6
4
2
8
4
0
0
2
1
0
0
0
Transfer characteristics
V
DS
100
2
5
V
DS
200
V
DD
= 20 V
I
4
D
=400 V
Electrical characteristics
=5 A
10
300
6
400
15
8
500
V
V
GS
DS
Q
V
GS
g
DS
(nC)
(V)
AM07918v1
AM03195v1
AM07922v1
(V)
0
400
300
250
200
100
350
150
50
7/17