STD10NM50N STMicroelectronics, STD10NM50N Datasheet - Page 5

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STD10NM50N

Manufacturer Part Number
STD10NM50N
Description
MOSFET N-CH 500V 7A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STD10NM50N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
630 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
450pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10954-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD10NM50N
Manufacturer:
STMicroelectronics
Quantity:
2 000
Part Number:
STD10NM50N
Manufacturer:
ST
0
STD10NM50N, STF10NM50N, STP10NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
I
t
t
SD
RRM
RRM
I
d(on)
d(off)
Q
Q
SD
t
t
t
t
rr
rr
rr
rr
r
f
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
Doc ID 16929 Rev 2
I
I
V
(see Figure 22)
I
V
(see Figure 22)
SD
SD
SD
V
R
(see Figure 17)
DD
DD
DD
G
= 7 A, V
= 7 A, di/dt = 100 A/µs
= 7 A, di/dt = 100 A/µs
= 4.7 Ω V
= 60 V
= 60 V, T
= 250 V, I
Test conditions
Test conditions
GS
j
GS
= 150 °C
D
= 0
= 3.5 A
= 10 V
Electrical characteristics
Min.
Min
-
-
-
-
-
Typ. Max
15.4
Typ. Max. Unit
177
216
1.4
1.7
7.8
4.4
7.8
16
12
1.3
28
7
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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