STB23NM50N STMicroelectronics, STB23NM50N Datasheet - Page 14

• Manufacturer Part Number: STB23NM50N
• Description: MOSFET N-CH 500V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB23NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.162 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10874-2

Package mechanical data
14/17
Dim
A
D
E
V
b
e
L
L
c
J
A
D
E
H
R
b
e
L
c
2
2
1
1
1
2
1
1
2
1
4
0
0
1
0
1
8
7
8
4
2
2
1
1
0079457_M
Min
1
1
° 0
4 .
0 .
7 .
1 .
4 .
2 .
9 .
5 .
5 .
8 .
4 .
2 .
2 .
3 .
0
5
0
3
0
4
5
3
5
0
0
8
9
9
7
0
D2PAK (TO-263) mechanical data
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Doc ID 16913 Rev 3
Typ
2
m
0
5 .
4 .
m
4
Max
1
1
4
0
0
1
0
1
9
5
2
2
1
1
0
5
° 8
6 .
2 .
9 .
7 .
6 .
3 .
3 .
2 .
6 .
7 .
4 .
7 .
4 .
8 .
0
3
3
0
0
6
5
8
9
9
0
5
0
5
Min
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 .
0 .
0 .
0 .
0 .
0 .
3 .
2 .
3 .
3 .
1 .
5 .
0 .
0 .
0 .
° 0
0 .
0
4
9
5
7
2
1
4
5
9
9
3
9
9
9
5
3
1
7
5
7
8
2
5
4
4
2
0
9
0
1
Typ
0
n i
0
0 .
c
1 .
1
h
6
Max
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 .
0 .
0 .
0 .
0 .
0 .
3 .
4 .
2 .
6 .
1 .
1 .
0 .
0 .
° 8
8
0
3
6
2
5
6
0
0
2
0
1
5
6
1
9
7
7
4
3
8
9
8
4
6
0
5
9