STP18N55M5 STMicroelectronics, STP18N55M5 Datasheet - Page 4

• Manufacturer Part Number: STP18N55M5
• Description: MOSFET N-CH 25V 14A TO-220AB
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP18N55M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.18ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Power: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-10963-5

Electrical characteristics
2
4/22
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
GS(th)
Q
Q
= 25 °C unless otherwise specified)
R
DSS
GSS
Q
oss eq.
oss eq.
oss
oss
rss
iss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
GS
GS
DS
DS
DS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0 to 440 V
= 10 V
= ± 25 V
= V
= 10 V, I
= 440 V, I
Figure
Test conditions
Test conditions
GS
, I
19)
GS
D
D
D
= 250 µA
= 6.5 A
= 0
= 6.5 A,
C
=125 °C
Min.
Min.
550
3
-
-
-
-
-
1352
Typ.
Typ.
0.18
3.7
1.7
6.3
38
98
35
31
14
4
Max.
Max.
0.24
100
100
1
5
-
-
-
-
-
oss
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
pF
V
V
Ω
Ω