STP23NM50N STMicroelectronics, STP23NM50N Datasheet - Page 5
![MOSFET N-CH 500V 17A TO-220](/photos/29/5/290504/to-220_sml.jpg)
STP23NM50N
Manufacturer Part Number
STP23NM50N
Description
MOSFET N-CH 500V 17A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB23NM50N.pdf
(17 pages)
Specifications of STP23NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1330pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.162 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
17 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10883-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP23NM50N
Manufacturer:
STMicroelectronics
Quantity:
500
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 16913 Rev 3
I
I
V
(see Figure 22)
I
V
(see Figure 22)
SD
SD
SD
DD
DD
= 17 A, V
= 17 A, di/dt = 100 A/µs
= 17 A, di/dt = 100 A/µs
= 60 V
= 60 V, T
Test conditions
GS
j
= 150 °C
= 0
Electrical characteristics
Min
-
-
-
-
3700
4800
Typ.
286
350
26
27
Max
1.3
17
68
Unit
nC
nC
ns
ns
A
A
V
A
A
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