IXTH16N20D2 IXYS, IXTH16N20D2 Datasheet - Page 4

• Manufacturer Part Number: IXTH16N20D2
• Description: MOSFET N-CH 200V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N20D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 73 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 208nC @ 5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 200
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.073
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 5500
• Crss, Typ, (pf): 607
• Qg, Typ, (nc): 208
• Pd, (w): 695
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.3
1.2
1.1
1.0
0.9
0.8
50
40
30
20
10
0
-4.0
-50
-50
Fig. 7. Normalized R
V
V
I
DS
-3.5
GS
D
Fig. 11. Normalized Breakdown and Threshold
= 8A
-25
= 20V
-25
= 0V
-3.0
Voltages vs. Junction Temperature
0
0
-2.5
Fig. 9. Input Admittance
T
T
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
-2.0
T
J
DS(on)
= 125ºC
V
- 40ºC
GS
25ºC
V
-1.5
GS(off)
- Volts
50
50
vs. Junction Temperature
@ V
-1.0
DS
75
75
= 25V
BV
-0.5
DSX
100
100
@ V
0.0
GS
= - 5V
125
125
0.5
150
1.0
150
2.6
2.2
1.8
1.4
1.0
0.6
0.2
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.3
0
0
V
DS
V
V
GS
GS
Fig. 12. Forward Voltage Drop of Intrinsic Diode
= 20V
5
= -10V
5
= 0V
Fig. 8. R
0.4
5V
10
- - - -
10
Fig. 10. Transconductance
T
DS(on)
15
J
= 25ºC
0.5
T
J
vs. Drain Current
= 125ºC
15
Normalized to I
20
T
I
J
I
D
D
V
= - 40ºC, 25ºC, 125ºC
- Amperes
SD
- Amperes
20
0.6
25
- Volts
T
J
= 125ºC
30
25
IXTH16N20D2
IXTT16N20D2
D
0.7
= 8A Value
35
30
T
40
J
0.8
= 25ºC
35
45
40
0.9
50