STW34NM60N STMicroelectronics, STW34NM60N Datasheet - Page 3

• Manufacturer Part Number: STW34NM60N
• Description: MOSFET N-CH 600V 29A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10975-5

STF34NM60N, STP34NM60N, STW34NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximu temperature allowed.
2. Pulse width limited by safe operating area.
3.
Table 3.
Symbol
R
R
Symbol
dv/dt
I
thj-case
thj-amb
I
DM
P
V
V
V
E
SD
T
I
T
T
I
I
TOT
AR
ISO
DS
GS
stg
AS
D
D
l
J
(2)
(3)
≤ 29 A, di/dt ≤ 400 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal data
C
J
= 25 °C)
= 25 °C, I
Parameter
Parameter
DS
Doc ID 17740 Rev 3
C
peak ≤ V
D
= 25 °C
= I
GS
AR
= 0)
(BR)DSS
, V
C
C
DD
= 25 °C
= 100 °C
J
= 50 V)
, V
max)
DD
= 80% V
TO-220, TO-247
TO-220
62.5
(BR)DSS
116
210
29
18
0.60
- 55 to 150
TO-247
Value
± 25
10.5
600
345
150
300
15
50
TO-220FP
Electrical ratings
29
1200
TO-220FP
116
18
40
(1)
62.5
3.13
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
A
V
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