NTMFS5844NLT1G ON Semiconductor, NTMFS5844NLT1G Datasheet

NTMFS5844NLT1G

Manufacturer Part Number

NTMFS5844NLT1G

Description

MOSFET N-CH 60V 60A SO-8FL

Manufacturer

ON Semiconductor

Datasheet

1.NTMFS5844NLT1G.pdf (6 pages)

Specifications of NTMFS5844NLT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

12 mOhm @ 10A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

2.3V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

1460pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-TDFN

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

16 mOhms

Forward Transconductance Gfs (max / Min)

27 s

Drain-source Breakdown Voltage

60 V

Continuous Drain Current

60 A

Power Dissipation

1.9 W, 3 W, 57 W, 89 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

30 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS5844NLT1G

Manufacturer:

VISHAY

Quantity:

14 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMFS5844NLT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (108Kb)

NTMFS5844NL

Power MOSFET

60 V, 60 A, 12 mW

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad

2. Surface−mounted on FR4 board using 0.155 in sq (100mm

October, 2010 − Rev. 0

MAXIMUM RATINGS

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.1 mH)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Case (Bottom) (Note 1)

Junction−to−Case (Top) (Note 1)

Junction−to−Ambient Steady State

(Note 1)

Junction−to−Ambient Steady State

(Note 2)

Compliant

Low R

Low Capacitance

Optimized Gate Charge

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Cu area = 1.127 in sq [2 oz] including traces).

qJA

qJC

(Note 1)

DS(on)

qJA

qJC

Parameter

Steady

State

= 25°C unless otherwise stated)

= 10 ms

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

Symbol

EAS

, T

IAS

qJC

qJA

DSS

STG

Value

−55 to

Value

1.4

4.4

+150

) pad size.

±20

243

260

9.0

3.0

1.9

°C/W

Unit

°C

†For information on tape and reel specifications,

NTMFS5844NLT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(BR)DSS

60 V

(Note: Microdot may be in either location)

CASE 488AA

Device

(SO−8FL)

STYLE 1

G (4)

DFN5

ORDERING INFORMATION

N−CHANNEL MOSFET

= Assembly Location

= Year

= Work Week

= Pb−Free Package

http://onsemi.com

16 mW @ 4.5 V

12 mW @ 10 V

D (5)

DS(ON)

(Pb−Free)

Package

DFN5

Publication Order Number:

MAX

S (1,2,3)

MARKING

DIAGRAM

1500/Tape & Reel

NTMFS5844NL/D

AYWWG

5844NL

Shipping

60 A

MAX

†

Related parts for NTMFS5844NLT1G

NTMFS5844NLT1G Summary of contents

Page 1

... G (Note: Microdot may be in either location) Symbol Value Unit R 1.4 °C/W qJC 4.4 R NTMFS5844NLT1G qJC R 41 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please R 75 qJA refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES & ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 ...

Page 4

C iss 1200 1000 800 600 400 C oss 200 C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 5

Duty Cycle = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 6

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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