NTTFS5116PLTAG ON Semiconductor, NTTFS5116PLTAG Datasheet - Page 3

MOSFET PWR P-CH 60V 20A 8-WDFN

NTTFS5116PLTAG

Manufacturer Part Number
NTTFS5116PLTAG
Description
MOSFET PWR P-CH 60V 20A 8-WDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTTFS5116PLTAG

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1258pF @ 30V
Power - Max
3.2W
Mounting Type
Surface Mount
Package / Case
8-WSDFN Exposed Pad
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
72 mOhms
Forward Transconductance Gfs (max / Min)
11 s
Drain-source Breakdown Voltage
- 60 V
Continuous Drain Current
- 20 A
Power Dissipation
1.6 W, 3.2 W, 20 W, 40 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Gate Charge Qg
25 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTTFS5116PLTAG
Manufacturer:
ON Semiconductor
Quantity:
20
Company:
Part Number:
NTTFS5116PLTAG
Quantity:
4 500
Company:
Part Number:
NTTFS5116PLTAG
Quantity:
1 500
0.075
0.065
0.055
0.045
0.035
0.6
2.0
1.8
1.6
1.4
1.2
1.0
0.8
40
30
20
10
0
−50
0
2
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
−25
= −4.4 A
V
Figure 5. On−Resistance Variation with
GS
Figure 1. On−Region Characteristics
= 4.5 V
V
V
DS
GS
= 10 V
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
0
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
4
25
Temperature
2
Voltage
50
6
75
V
V
V
V
3
GS
GS
GS
GS
100
= 4.5 V
= 3.5 V
= 4 V
= 3 V
TYPICAL CHARACTERISTICS
8
125
T
I
D
4
J
= −6 A
= 25°C
http://onsemi.com
150
175
10
5
3
10,000
0.080
0.070
0.060
0.050
0.040
0.030
1,000
100
40
30
20
10
0
10
2
5
Figure 4. On−Resistance vs. Drain Current and
V
T
V
T
Figure 6. Drain−to−Source Leakage Current
DS
J
GS
J
= 25°C
= 125°C
V
≥ 10 V
−V
GS
= 0 V
10
T
V
Figure 2. Transfer Characteristics
J
GS
DS
= 4.5 V
V
20
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
3
= 10 V
15
I
D
T
, DRAIN CURRENT (A)
J
= −55°C
Gate Voltage
vs. Voltage
30
20
T
T
J
J
= 150°C
= 125°C
4
25
40
30
5
50
35
40
60
6

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