NTMFS4926NT3G ON Semiconductor, NTMFS4926NT3G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4926NT3G
• Description: MOSFET N-CH 30V 44A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4926NT3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1004pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Forward Transconductance Gfs (max / Min): 17 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 0.92 W, 2.7 W, 6.13 W, 21.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1400
1200
1000
1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0
1
0.01
R
Thermal Limit
Package Limit
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
DS(on)
V
V
I
D
0 V < V
Single Pulse
T
GS
DD
C
= 15 A
V
V
= 25°C
= 10 V
= 15 V
5
DS
DS
Limit
Figure 7. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
C
C
GS
C
0.1
oss
rss
iss
R
< 10 V
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
15
10
1
20
TYPICAL CHARACTERISTICS
10
T
V
J
GS
= 25°C
25
= 0 V
http://onsemi.com
100 ms
t
t
t
10 ms
1 ms
10 ms
dc
t
d(off)
r
d(on)
f
100
100
30
5
10
30
25
20
15
10
22
20
18
16
14
12
10
11
9
8
7
6
5
4
3
2
1
0
5
0
8
6
4
2
0
0
0.4
25
Figure 10. Diode Forward Voltage vs. Current
Qgs
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
V
T
2
J
GS
, STARTING JUNCTION TEMPERATURE (°C)
V
0.5
= 0 V
SD
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
T
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
4
J
Qgd
= 125°C
0.6
6
75
QT
8
0.7
10
100
0.8
12
T
J
= 25°C
14
V
V
I
D
125
T
GS
DD
I
J
= 30 A
D
0.9
= 25°C
= 21 A
= 10 V
= 15 V
16
150
1.0
18