NTMFS4925NT1G ON Semiconductor, NTMFS4925NT1G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4925NT1G
• Description: MOSFET N-CH 30V 48A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4925NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1264pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 5-TDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Forward Transconductance Gfs (max / Min): 52 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16.7 A
• Power Dissipation: 0.92 W, 2.7 W, 6.16 W, 23.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 10.8 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1600
1400
1200
1000
1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0
1
0.01
Figure 9. Resistive Switching Time Variation
0 V < V
Single Pulse
T
R
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
C
DS(on)
= 25°C
V
V
I
D
V
GS
DD
V
= 15 A
5
DS
DS
GS
Figure 7. Capacitance Variation
Limit
= 10 V
= 15 V
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
C
C
C
< 10 V
0.1
oss
rss
iss
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
15
10
1
20
TYPICAL CHARACTERISTICS
10
T
V
J
GS
= 25°C
25
= 0 V
http://onsemi.com
100 ms
t
t
t
10 ms
1 ms
10 ms
dc
t
d(off)
r
d(on)
f
100
100
30
5
10
30
25
20
15
10
40
36
32
28
24
20
16
12
11
9
8
7
6
5
4
3
2
1
0
5
0
8
4
0
0
0.3
25
Figure 10. Diode Forward Voltage vs. Current
Qgs
V
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
T
2
GS
J
0.4
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
4
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Qgd
0.5
6
T
J
= 125°C
8
75
0.6
QT
10
12
0.7
100
14
0.8
16
T
J
V
V
I
= 25°C
D
125
T
GS
DD
I
D
18
J
= 30 A
= 25°C
0.9
= 26 A
= 10 V
= 15 V
20
150
1.0
22