BLF7G20L-140P,118 NXP Semiconductors, BLF7G20L-140P,118 Datasheet - Page 4

• Manufacturer Part Number: BLF7G20L-140P,118
• Description: TRANSISTOR PWR LDMOS SOT1121
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-140P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G20LS-140P
Product data sheet
Fig 2.
(dB)
G
18.5
17.5
16.5
p
19
18
17
16
0
V
f
Two-tone CW power gain and drain efficiency
as function of load power; typical values
2
DS
= 1880.05 MHz.
= 28 V; I
G
η
D
p
20
7.2 One-tone CW
7.3 Two-tone CW
Dq
= 850 mA; f
40
Fig 1.
60
1
V
One-tone CW power gain and drain efficiency as function of load power;
typical values
= 1879.95 MHz;
DS
= 28 V; I
80
All information provided in this document is subject to legal disclaimers.
001aam400
P
L
(W)
Dq
(dB)
G
= 850 mA; f = 1880 MHz.
100
Rev. 2 — 17 August 2010
p
20
19
18
17
16
15
14
13
60
50
40
30
20
10
0
(%)
η
0
D
30
G
η
Fig 3.
D
p
(dBc)
IMD
60
−10
−20
−30
−40
−50
−60
−70
−80
0
0
V
f
Two-tone CW intermodulation distortion as a
function of load power; typical values
2
90
DS
= 1880.05 MHz.
= 28 V; I
120
20
BLF7G20LS-140P
Dq
150
= 850 mA; f
001aam399
40
P
L
(W)
180
Power LDMOS transistor
70
60
50
40
30
20
10
0
60
1
(%)
η
D
= 1879.95 MHz;
© NXP B.V. 2010. All rights reserved.
80
001aam401
P
IMD3
IMD5
IMD7
L
(W)
100
4 of 13