BLF6G27-100,118 NXP Semiconductors, BLF6G27-100,118 Datasheet - Page 2

• Manufacturer Part Number: BLF6G27-100,118
• Description: TRANS PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27-100,118

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 14W
• Resistance Drain-source Rds (on): 0.16 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF6G27-100_BLF6G27LS-100
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Pin
BLF6G27-100 (SOT502A)
1
2
3
BLF6G27LS-100 (SOT502B)
1
2
3
Type number
BLF6G27-100
BLF6G27LS-100 -
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
Connected to flange.
Pinning
Ordering information
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
BLF6G27-100; BLF6G27LS-100
Rev. 02 — 8 July 2010
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
[1]
[1]
Simplified outline
WiMAX power LDMOS transistor
1
2
1
2
3
3
Graphic symbol
© NXP B.V. 2010. All rights reserved.
2
2
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
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