BLF7G20L-160P,118 NXP Semiconductors, BLF7G20L-160P,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G20L-160P,118
• Description: TRANSISTOR PWR LDMOS SOT1121
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-160P,118

• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Fig 2.
BLF7G20L-160P_7G20LS-160P
Objective data sheet
Earless flanged LDMOST ceramic package; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1121B
Outline
version
Package outline SOT1121B
(1)
max
nom
max
nom
min
min
0.187
0.136
4.75
3.45
A
H
A
U
0.155
0.145
3.94
3.68
2
b
0.007
0.003
0.18
0.08
IEC
c
20.02
19.61
0.788
0.772
D
1
3
19.96
19.66
0.786
0.774
D
1
BLF7G20L-160P; BLF7G20LS-160P
JEDEC
8.89
0.35
All information provided in this document is subject to legal disclaimers.
e
0.375
0.365
D
U
H
9.53
9.27
D
e
References
1
1
1
E
Rev. 01 — 22 June 2010
0.375
0.365
0
9.53
9.27
E
1
0.045
0.035
b
1.14
0.89
JEITA
F
2
4
scale
19.94
18.92
0.785
0.745
5
H
5
12.83
12.57
0.505
0.495
w
H
3
1
10 mm
0.067
0.057
D
1.70
1.45
Q
w
2
20.70
20.45
0.815
0.805
F
U
1
D
9.91
9.65
0.39
0.38
U
2
0.51
0.02
w
European
projection
2
E
0.25
0.01
Power LDMOS transistor
w
1
3
Q
© NXP B.V. 2010. All rights reserved.
c
Issue date
09-10-12
09-12-14
sot1121b_po
E
SOT1121B
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