BLF7G22LS-200,112 NXP Semiconductors, BLF7G22LS-200,112 Datasheet - Page 4

• Manufacturer Part Number: BLF7G22LS-200,112
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-200,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29.5A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 30W
• Mounting Style: SMD/SMT
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29.5 A
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18.9S
• Drain Source Resistance (max): 54(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 31%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G22L-200_7G22LS-200
Preliminary data sheet
Fig 1.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
19
18
17
16
0
V
power; typical values
Power gain as a function of average load
DS
= 28 V; I
7.2 1 Tone CW
Dq
80
= 1620 mA.
(1)
(2)
(3)
160
P
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan064
(W)
BLF7G22L-200; BLF7G22LS-200
Rev. 2 — 28 December 2010
240
Fig 2.
(%)
η
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
60
50
40
30
20
10
0
V
Drain efficiency as a function of average load
power; typical values
DS
= 28 V; I
Dq
80
= 1620 mA.
Power LDMOS transistor
160
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aan065
(W)
(1)
(2)
(3)
240
4 of 12