ST13003DN STMicroelectronics, ST13003DN Datasheet - Page 3

• Manufacturer Part Number: ST13003DN
• Description: TRANSISTOR PWR NPN FAST HV SOT32
• Manufacturer: STMicroelectronics

Specifications of ST13003DN

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.2V @ 330mA, 1A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 6 @ 500mA, 2V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 700 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10873

ST13003DN
2
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
V
V
case
V
Symbol
CE(sat)
BE(sat)
CEO(sus)
I
I
h
EBO
CES
V
(1)
t
FE
t
s
= 25 °C; unless otherwise specified.
f
F
(1)
(1)
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter sustaining
voltage (I
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
DC current gain
Inductive Load
Storage time
Fall time
Diode forward voltage
Electrical characteristics
C
BE
= 0)
= 0)
Parameter
B
= 0)
Doc ID 17186 Rev 1
V
V
V
I
I
I
I
I
I
I
I
I
V
I
C
C
C
C
C
C
C
C
B(on)
F
CE
CE
EB
BB(off)
= 350 mA
= 10 mA
= 0.5 A
= 1 A
= 0.5 A
= 1 A
= 0.5 A,
= 1 A
= 0.4 A
= 700 V
= 700 V
= 9 V
= -I
Test conditions
= - 5 V
B(off)
_
V
clamp
= 80 mA
I
I
I
I
V
V
B
B
B
B
T
CE
CE
= 125 mA
= 330 mA
= 125 mA
= 330 mA
= 300 V
C
= 2 V
= 10 V
= 125 °C
Figure 2
Electrical characteristics
Min. Typ. Max. Unit
400
6
5
180
2.5
1.5
0.7
1.2
1.2
1.3
18
15
1
5
1
mA
mA
mA
µs
ns
V
V
V
V
V
V
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