SI2707-A10-GM Silicon Laboratories Inc, SI2707-A10-GM Datasheet - Page 5

• Manufacturer Part Number: SI2707-A10-GM
• Description: AMPLIFIER AUDIO CLASS D 24QFN
• Manufacturer: Silicon Laboratories Inc
• Type: Class Dr

Specifications of SI2707-A10-GM

• Output Type: 2-Channel (Stereo) with Stereo Headphones
• Package / Case: 24-VFQFN Exposed Pad
• Max Output Power X Channels @ Load: 5W x 2 @ 3 Ohm
• Voltage - Supply: 4 V ~ 6.6 V
• Features: Depop, I²S, Short-Circuit and Thermal Protection, Tone and Volume Control
• Mounting Type: Surface Mount
• Product: Class-D
• Output Power: 5 W
• Thd Plus Noise: 0.1 %
• Supply Current: 100 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Audio Load Resistance: 8 Ohms
• Input Offset Voltage: Minimum Operating Temperature
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 336-1928

1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
Power Output Supply Voltage
Main Supply Voltage
Interface (I/O) Supply Voltage
Load Impedance
Ambient Temperature
Junction Temperature
Case Delta from Junction
Delta from Junction to Ambient
Notes:
Power Output Supply Voltage
Main Supply Voltage
Interface (I/O) Supply Voltage
Input Current
Input Voltage
Operating Temperature
Junction Temperature
Storage Temperature
Notes:
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
2. Operation with V
3. The
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. For input pins SCLK, SDIO, DCLK, DFS, DIN, RST, OUTSEL, MFPx.
Typical values apply at V
otherwise stated.
assuming adequate ground plane as in “AN470: 270x Layout Guidelines.”
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
Parameter

JA
2
2
is layout-dependent; therefore, PCB layout must provide adequate heat-sink capability. The.
Parameter
PP
as low as 3 V is possible at reduced performance.
DD
3
= 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
Symbol
V
V
V


R
T
T
JC
JA
DD
PP
IO
L
A
J
1
Temperature delta between junc-
tion and top center of package
Rev. 0.6
1
Symbol
Test Condition
QFN package
V
V
V
V
I
T
T
T
IN
PP
DD
IO
IN
eTQFP
A
A
J
Si2704/05/06/07-A10
–0.3 to (V
–55 to +150
–0.5 to 3.9
–20 to +85
–0.5 to 7.0
–0.5 to 3.9
Value
1.62
4.0
Min
–20
150
2.7
—
—
—
—
—
10
IO
2
+ 0.3)
Typ
3–8
3.3
25
25
30
—
—
—
—

JA
Max
135
6.6
3.6
3.6
85
—
—
—
is specified,
5
Unit
mA
°C
°C
°C
V
V
V
V
°C/W
°C/W
°C/W
Unit
°C
°C
Ω
V
V
V
5