QEE113 Fairchild Semiconductor, QEE113 Datasheet
首页 Optoelectronics Infrared Emitters QEE113
Manufacturer Part Number
QEE113
Description
Infrared Emitters 0.015mW 1.5V IR LED
Manufacturer
Fairchild Semiconductor
Beam Angle
+/- 25
Radiant Intensity
12 mW/sr
Maximum Forward Current
50 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.5 V
Wavelength
940 nm
Package / Case
Side Looker
Package Type
Side Looker
Luminous Intensity
7.5mW/sr
Test Current (it)
100mA
Forward Current
50mA
Viewing Angle
50°
Forward Voltage
1.5V
Product Length (mm)
4.44mm
Product Height (mm)
5.08mm
Product Depth (mm)
2.54mm
Mounting
Through Hole
Peak Wavelength
945nm
Shape Type
Circular
Chip Material
GaAs
Main Category
IrLED
Number Of Elements
1
Pin Count
2
Operating Temperature Classification
Industrial
Lens Type
Non Diffused
Operating Temp Range
-40C to 100C
Reverse Voltage
5V
Power Dissipation
100mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QEE113_NL
Available stocks
Manufacturer:
FAIRCHILD/仙童
Part Number:
QEE113 /QSE113
Part Number:
QEE113 /QSE114
Part Number:
QEE113 /QSE122
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
QEE113
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Package Type = Sidelooker
Chip Material = GaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Gray stripe on the top side
= 940nm
unless otherwise specified.
0.050 (1.27)
Ø0.095 (2.41)
0.020 (0.51) SQ.
0.087 (2.22)
CATHODE
PACKAGE DIMENSIONS
0.030 (0.76)
(2X)
0.100 (2.54)
0.175 (4.44)
0.100 (2.54)
NOM
ANODE
Ø0.065 (1.65)
0.500 (12.70)
0.200 (5.08)
MIN
Description
The QEE113 is a 940nm GaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008
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QEE113 Summary of contents
... Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 Description The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. 0.175 (4.44) Ø0.065 (1.65) 0.200 (5.08) 0.500 (12.70) ...
... VF I Reverse Current R I Radiant Intensity E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) ( 25°C) A Test Conditions Min 20mA 100mA 100mA 20ms ...
... PW Duty Cycle = 4% 3 2.5 2.0 1.5 1.0 10 100 I – FORWARD CURRENT (mA) F ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 975 970 965 960 955 950 945 940 935 900 950 1,000 1,050 0 Fig. 4 Normalized Radient Intensity vs. Ambient Temperature 1.4 1.2 1 ...
... Fig. 7 Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 (Continued) Fig. 8 Coupling Characteristics of QEE113 And QSE113 0.2 0 0.2 0.4 0.6 0.8 1.0 0.0 ...
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation QEE113 Rev. 1.0.1 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...
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