SE1450-004L Honeywell, SE1450-004L Datasheet

Infrared Emitters 1.2 mW/cm2 maximum 10kOhm PULL UP 100mW

SE1450-004L

Manufacturer Part Number
SE1450-004L
Description
Infrared Emitters 1.2 mW/cm2 maximum 10kOhm PULL UP 100mW
Manufacturer
Honeywell
Type
IrLEDr
Datasheet
1.SE1450-004L.pdf (4 pages)

Specifications of SE1450-004L

Maximum Power Dissipation
75 mW
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Wavelength
935 nm
Package / Case
Metal Can
Package Type
Metal Can
Test Current (it)
50mA
Forward Current
50mA
Viewing Angle
24°
Forward Voltage
1.6V
Product Length (mm)
2.41mm
Product Height (mm)
3.1mm
Product Depth (mm)
2.41mm
Mounting
Through Hole
Peak Wavelength
935nm
Shape Type
Circular
Chip Material
GaAs
Main Category
IrLED
Number Of Elements
1
Pin Count
2
Operating Temperature Classification
Military
Operating Temp Range
-55C to 125C
Power Dissipation
75mW
Lens Dimensions
1.57x1.57x0.84mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
DESCRIPTION
The SE1450 is a gallium arsenide infrared emitting
diode mounted in a glass lensed, metal can coaxial
package. The package may have a tab or second lead
welded to the can as an optional feature
(SE1450-XXXL). Both leads are flexible and may be
formed as required to fit various mounting
configurations.
SE1450
GaAs Infrared Emitting Diode
Compact, metal can coaxial package
24¡ (nominal) beam angle
935 nm wavelength
Wide operating temperature range
(- 55¡C to +125¡C)
Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
8
SE1450-XXX
DIM_001a.ds4
SE1450-XXXL
DIM_001b.ds4
INFRA-63.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
.062(1.57) DIA
.062(1.57) DIA
.079(2.01)
.076(1.93)
.079(2.01)
.076(1.93)
.122(3.10)
.106(2.69)
.122(3.10)
.106(2.69)
.091(2.26)
.091(2.26)
DIA
DIA
3 plc decimals
2 plc decimals
~ ~
TYPICAL MIN
1.000(25.40)
1.000(25.40)
.010(0.25)
.010(0.25)
MIN
CATHODE (CASE)
CATHODE
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
±0.005(0.12)
±0.020(0.51)
ANODE
ANODE
.020(0.51)
.020
(0.51) DIA
.020
(0.51) DIA
DIA
.095(2.41) DIA
.095(2.41) DIA
~ ~

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SE1450-004L Summary of contents

Page 1

... Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington DESCRIPTION The SE1450 is a gallium arsenide infrared emitting diode mounted in a glass lensed, metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1450-XXXL) ...

Page 2

... SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C. ...

Page 3

... SE1450 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1. Forward current - mA Fig. 5 Spectral Bandwidth 1 ...

Page 4

... SE1450 GaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature 10 5.0 I 2.0 F 1.0 0.5 0.2 0.1 -50 - Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...

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