SIR-320ST3F Rohm Semiconductor, SIR-320ST3F Datasheet
SIR-320ST3F
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SIR-320ST3F Summary of contents
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... Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment ...
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... FORWARD VOLTAGE : V (V) F Fig.2 Forward current vs. forward voltage 200 100 − AMBIENT TEMPERATURE : Ta (°C) Fig.5 Radiant intensity vs. ambient temperature SIR-320ST3F Conditions =50mA I F =50mA I F =50mA =50mA I F =50mA I F =50mA I F =50mA I F =50mA I F ...
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... ANGULAR DISPLACEMENT : θ(deg) RELATIVE EMITTING STRENGTH (%) Fig.7 Directional pattern 100 20° 30° 40° 50° 60° 70° 80° 90° 100 80 no masking 10° 20° 30° 40° 50° 60° 70° 80° 90° SIR-320ST3F Rev.B 3/3 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...