QEE123 Fairchild Semiconductor, QEE123 Datasheet
QEE123
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QEE123 Summary of contents
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... Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 Description The QEE12X is a 880 nm AlGaAs LED encapsulated in a medium wide angle, plastic sidelooker package. 0.175 (4.44) Ø ...
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... R I Radiant Intensity QEE122 E Radiant Intensity QEE123 TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(3) ( 25°C) A Test Conditions Min 20mA 100mA ...
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... PW Duty Cycle = 4% 4 3.0 2.0 1.0 0.0 10 100 I – FORWARD CURRENT (mA) F ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 Figure 2. Peak Wavelength vs. Ambient Temperature 910 908 906 904 902 900 898 896 894 900 950 1,000 1,050 0 Figure 4. Normalized Radient Intensity vs. Ambient Temperature 1 ...
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... Figure 7. Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 (Continued) Figure 8. Coupling Characteristics of QEE123 and QSE113 0.4 10 0.2 0 0.2 0.4 0.6 0.8 1.0 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...