SD1410-004 Honeywell, SD1410-004 Datasheet - Page 3

• Manufacturer Part Number: SD1410-004
• Description: Photodetector Transistors Silicon Photodarlington
• Manufacturer: Honeywell
• Type: Photodarlingtonr

Specifications of SD1410-004

• Maximum Power Dissipation: 75 mW
• Maximum Dark Current: 250 nA
• Collector- Emitter Voltage Vceo Max: 1.1 V
• Collector-emitter Saturation Voltage: 1.1 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Package / Case: Metal Can
• Phototransistor Type: PhotoDarlington
• Polarity: NPN
• Number Of Elements: 1
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 15V
• Collector-emitter Sat Volt (max): 1.1V
• Dark Current (max): 250nA
• Light Current: 8mA
• Rise Time: 75000ns
• Fall Time: 75000ns
• Power Dissipation: 75mW
• Half-intensity Angle: 24deg
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Metal Can
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SWITCHING TIME TEST CIRCUIT
Fig. 1
Fig. 3
All Performance Curves Show Typical Values
SD1410
Silicon Photodarlington
154
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
Responsivity vs
Angular Displacement
Non-Saturated Switching Time vs
Load Resistance
-40
10
-30
Angular displacement - degrees
Load resistance - Ohms
-20
100
-10
0
+10 +20 +30 +40
1000
gra_057.ds4
gra_049.ds4
10000
cir_016.cdr
SWITCHING WAVEFORM
Fig. 2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Spectral Responsivity
400
600
Wavelength - nm
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
800 1000 1200
gra_036.ds4
cir_004.cdr