This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QSE133 is a silicon photodarlington encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES • NPN silicon phototransistor • Package type: Sidelooker • ...
... 100 µ 0.25 mW/ C(ON 0.5 mW/ 0.4 mA CE(SAT 0.15mA 5V 100 Ω Page PLASTIC SILICON QSE133 Symbol Rating T -40 to +100 OPR T -40 to +100 STG T 240 for 5 sec SOL-I T 260 for 10 sec SOL 100 D Min Typ Max — 880 — PS Θ — ±25 — ...
... Fairchild Semiconductor Corporation PLASTIC SILICON INFRARED PHOTOTRANSISTOR 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Page QSE133 5/1/02 ...