SFH 314 OSRAM Opto Semiconductors Inc, SFH 314 Datasheet - Page 4
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SFH 314
Manufacturer Part Number
SFH 314
Description
Photodetector Transistors PHOTOTRANSISTOR
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.SFH_314.pdf
(7 pages)
Specifications of SFH 314
Maximum Power Dissipation
200 mW
Maximum Dark Current
3 nA
Collector- Emitter Voltage Vceo Max
70 V
Collector-emitter Saturation Voltage
150 mV
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
T-1 3/4
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Emitter-collector Voltage (max)
7V
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Dark Current (max)
200nA
Power Dissipation
200mW
Peak Wavelength
850nm
Half-intensity Angle
80deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P1668
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
SFH 314:
E
standard light A,
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
I
E
1)
1)
Directional Characteristics
S
2007-04-03
100
C
C
50
60
70
80
90
rel
e
v
e
= 1 mA,
=
I
I
= 1000 Ix, Normlicht/
= 0.5 mW/cm
= 0.5 mW/cm
PCEmin
PCEmin
=
I
1.0
PCEmin
f
40
(ϕ)
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
0.8
1)
V
CC
× 0.3,
30
0.6
= 5 V,
2
2
V
,
V
CE
20
CE
0.4
= 5 V
R
= 5 V
L
10
= 1 kΩ
1.0
0.8
0.6
0.4
0.2
0
0
0
20
Symbol
Symbol
I
I
t
V
r
PCE
PCE
,
CEsat
t
f
40
60
-1
0.63 … 1.25
3.4
8
150
80
100
4
OHF02329
120
-2
1 … 2
5.4
10
150
Value
Wert
-3
1.6 … 3.2
8.6
12
150
SFH 314, SFH 314 FA
-4
≥ 2.5
13.5
14
150
Einheit
Unit
mA
mA
μs
mV