SFH 3605-Z OSRAM Opto Semiconductors Inc, SFH 3605-Z Datasheet - Page 3

• Manufacturer Part Number: SFH 3605-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 3605-Z

• Maximum Power Dissipation: 130 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: MIDLED
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A1574

Kennwerte (
Characteristics (cont’d)
Bezeichnung
Parameter
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
Anstiegszeit/Abfallzeit,
λ = 950 nm
Rise and fall time
I
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
1)
2007-04-03
C
C
CE
e
e
= 100 µA,
=
I
= 0.1 mW/cm
= 0.1 mW/cm
PCEmin
= 20 V,
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe /
V
1)
CE
E
× 0.3,
T
V
= 0
A
CC
= 5 V,
= 25 °C)
2
2
,
, λ = 950 nm
= 5 V,
V
CE
f
= 5 V
= 1 MHz,
R
L
= 10 kΩ
E
= 0
Symbol
Symbol
I
t
V
r
PCE
,
CEsat
t
f
3
-2
100 .. 200
30
150
I
PCEmin
Symbol
Symbol
ϕ
C
I
CEO
CE
is the min. photocurrent of the specified group.
-3
160 ... 320 250 ... 500 μA
45
150
Value
Wert
Wert
Value
± 20
1.3
1 (≤ 50)
SFH 3600, SFH 3605
-4
70
150
Einheit
Unit
Grad
deg.
pF
nA
Einheit
Unit
μs
mV