TEMT1000 Vishay, TEMT1000 Datasheet - Page 3

• Manufacturer Part Number: TEMT1000
• Description: Photodetector Transistors 5V 100mW 880nm
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of TEMT1000

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 200 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SMD
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 950nm
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TEMT1000, TEMT1020, TEMT1030, TEMT1040
Vishay Semiconductors
www.vishay.com
478
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
94 8294
94 8293
21168
0.01
Fig. 4 - Collector Light Current vs. Irradiance
100
0.1
10
10
Fig. 5 - Collector Emitter Capacitance vs.
1
8
6
4
2
0
8
6
4
2
0
0.1
0.01
0
V
Collector Emitter Voltage
2
CE
- Collector Emitter Voltage (V)
I
C
E
- Collector Current (mA)
4
e
0.1
- Irradiance (mW/cm²)
1
6
f = 1 MHz
R
λ
V
L
CE
8
= 950 nm
For technical questions, contact: [e-mail]
= 100 Ω
= 5 V
10
λ
1
V
10
t
= 950 nm
on
CE
t
off
Silicon NPN Phototransistor, RoHS Compliant
= 5 V
12
100
14
10
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
21169
94 8248
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
600
0.6
0.4
700
λ - Wavelength (nm)
0.2
800
0
0°
900
10°
Document Number: 81554
1000
20°
Rev. 1.6, 09-Sep-08
1100
30°
40°
50°
60°
70°
80°