BPW17N Vishay, BPW17N Datasheet - Page 4

• Manufacturer Part Number: BPW17N
• Description: Photodetector Transistors NPN Phototransistor 32V 100mW 825nm
• Manufacturer: Vishay
• Type: Chipr
• Series: -r

Specifications of BPW17N

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 200 nA
• Maximum Operating Temperature: + 100 C
• Package / Case: T-3/4
• Transistor Polarity: NPN
• Wavelength Typ: 825nm
• Power Consumption: 100mW
• Viewing Angle: 12°
• No. Of Pins: 2
• Light Current: 1.0mA
• Dark Current: 200nA
• C-e Breakdown Voltage: 32V
• Current Rating: 50mA
• Transistor Case Style: T-3/4
• Current Ic Typ: 1mA
• External Length / Height: 2.9mm
• Fall Time Tf: 3.7µs
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Water Clear
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 32V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 200nA
• Power Dissipation: 100mW
• Peak Wavelength: 825nm
• Half-intensity Angle: 24deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE DIMENSIONS in millimeters
Document Number: 81516
Rev. 1.7, 08-Sep-08
6.544-5042.01-4
Issue:1; 01.07.96
96 12187
0.5
2.54 nom.
3.3
+ 0.2
- 0.1
Silicon NPN Phototransistor, RoHS Compliant
± 0.15
E
For technical questions, contact: [e-mail]
C
Chip position
0.4
1.8
Area not plane
+ 0.15
± 0.1
Vishay Semiconductors
technical drawings
according to DIN
specifications
BPW17N
www.vishay.com
373