BPX 38-2/3 OSRAM Opto Semiconductors Inc, BPX 38-2/3 Datasheet - Page 26

• Manufacturer Part Number: BPX 38-2/3
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 38-2/3

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 100nA
• Wavelength: 880nm
• Viewing Angle: 80°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3578

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
132
TO39
DIL
SMT DIL
Photodetectors for special applications
Dual photodiodes
Package
Infrared Components
Silicon Photodetectors
Type
SFH 221
BPX 48
KOM 2125
http://catalog.osram-os.com
Half
angle
ϕ
[°]
± 55
± 60
± 60
Radiant
sensitive
area typ.
[mm
1.54
1.54
4 diode A
10 diode B
2
]
I
[μA]
24 (≥ 15)
24 (≥ 15)
40 (≥ 30)
diode A
100 (≥ 75)
diode B
P
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Measure-
ment cond.
E
lx, Std.
Light A, V
= 5 V
E
lx, Std.
Light A, V
= 5 V
E
lx, Std.
Light A, V
= 5 V
v
v
v
= 1000
= 1000
= 1000
R
R
R
I
[nA]
10 (≤
100)
10 (≤
100)
5 (≤ 30)
diode A
10 (≤ 30)
diode B
R
Measure-
ment
cond.
V
V
V
R
R
R
= 10 V
= 10 V
= 10 V
λ
typ.
[nm]
400 ...
1100
400 ...
1150
400 ...
1100
10%
t
typ
[μs]
0.5
0.5
0.018
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
L
L
L
= 5 V,
= 1 kΩ,
= 5 V,
= 1 kΩ,
= 5 V,
= 50 Ω,
Ordering Code
Q62702P0270
Q62702P0017S0
01
Q65110A2703
Technical Data
Package
Fig.
48
49
36