SFH 325 FA-3/4-Z OSRAM Opto Semiconductors Inc, SFH 325 FA-3/4-Z Datasheet - Page 4

• Manufacturer Part Number: SFH 325 FA-3/4-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr
• Series: SIDELEDr

Specifications of SFH 325 FA-3/4-Z

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PLCC-2
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 50nA
• Wavelength: 980nm
• Viewing Angle: 120°
• Power - Max: 165mW
• Mounting Type: Surface Mount, Right Angle
• Orientation: Side View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2490

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Fotostrom, λ = 950 nm
Photocurrent
E
SFH 325:
E
Normlicht/standard light A,
V
Anstiegszeit/Abfallzeit
Rise and fall time
I
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
E
1)
1)
Directional Characteristics
2007-04-04
100
C
C
50
60
70
80
90
e
v
CE
e
= 1 mA,
=
I
I
= 1000 Ix,
= 0.1 mW/cm
= 0.1 mW/cm
PCEmin
PCEmin
= 5 V
I
PCEmin
1.0
40
ist der minimale Fotostrom der jeweiligen Gruppe.
is the min. photocurrent of the specified group.
0.8
1)
V
CC
× 0.3,
30
= 5 V,
0.6
2
2
,
V
CE
20
0.4
R
= 5 V
L
10
= 1 kΩ
ϕ
S
1.0
0.8
0.6
0.4
0.2
0
0
0
rel
=
20
f
(ϕ)
40
Symbol
Symbol
I
I
I
t
V
r
PCE min
PCE max
PCE
,
CEsat
t
f
60
80
-2A
4
360
150
16
25
6
100
OHF01402
120
-2B
450
150
20
32
6
-3A
570
150
25
40
7
Value
Wert
-3B
720
150
32
50
7
SFH 325, SFH 325 FA
-4A
900
150
40
63
8
-4B
1140
150
50
80
8
Einheit
Unit
μA
μA
μA
μs
mV