SFH 309 P OSRAM Opto Semiconductors Inc, SFH 309 P Datasheet - Page 3

• Manufacturer Part Number: SFH 309 P
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 309 P

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 200nA
• Wavelength: 860nm
• Viewing Angle: 150°
• Power - Max: 165mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0245

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche (∅ 220 μm)
Radiant sensitive area
Abmessungen der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2007-04-02
CE
= 10% von
= 10% of
= 25 V,
V
S
CE
E
max
T
S
= 0
A
max
= 0 V,
= 25 °C, λ = 950 nm)
f
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
CEO
S max
CE
×
×
B
W
3
SFH 309 P
860
380 … 1180
0.038
0.45 × 0.45
± 75
5.0
1 (≤ 200)
SFH 309 P, SFH 309 PFA
Value
Wert
SFH 309 PFA
900
730 … 1120
0.038
0.45 × 0.45
± 75
5.0
1 (≤ 200)
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
2