RPT-37PB3F Rohm Semiconductor, RPT-37PB3F Datasheet - Page 2

• Manufacturer Part Number: RPT-37PB3F
• Description: Photodetector Transistors PHOTO Visible Ray Cut Colored Pkg
• Manufacturer: Rohm Semiconductor
• Type: Chipr

Specifications of RPT-37PB3F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 500 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Package / Case: T-1
• Voltage - Collector Emitter Breakdown (max): 32V
• Current - Collector (ic) (max): 30mA
• Current - Dark (id) (max): 500nA
• Wavelength: 800nm
• Viewing Angle: 72°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical and optical characteristic curves
○
RPT-37PB3F
c
www.rohm.com
1000
1000
100
100
10
0.1
2010 ROHM Co., Ltd. All rights reserved.
10
10
8
6
4
2
0
1
1
0
0.1
COLLECTOR−EMITTER VOLTAGE : V
−25
Fig.4 Output characteristics
Fig.1 Dark current
AMBIENT TEMPERATURE : Ta
2
COLLECTOR CURRENT : I
Fig.7 Response time vs.
4
vs. ambient temperature
0
collector current
1
6
25
8
E=1000Lux
10
50
750Lux
500Lux
250Lux
10
12
R
R
R
V
V
V
C
L
L
L
CE
CE
CE
Ta=25°C
V
(mA)
=1kΩ
=500Ω
=100Ω
75
CE
=10V
=20V
=30V
(°C)
14
CE
=5V
(V)
100
16
90°
80°
100
70°
60°
RELATIVE LUMINOUS INTENSITY (%)
1000
100
500
200
100
75
50
25
50
20
10
0
400
50°
80
−25
Fig.2 Relative output
AMBIENT TEMPERATURE : Ta
40°
Fig.5 Spectral sensitivity
OPTICAL WAVELENGTH : λ (nm)
600
60
vs. ambient temperature
30°
0
800
40
2/2
20°
25
Fig.8 Directional pattern
1000
20
10°
50
1200
0°
0
75
(°C)
ANGULAR DISPLACEMENT (deg)
10°
1600
20° 30° 40° 50° 60° 70° 80° 90°
100
160
120
80
40
8
6
4
2
0
0
−25
V
Fig.3 Light current vs. irradiance
CE
Fig.6 Collector dissipation vs.
100
80
60
40
20
=5V
AMBIENT TEMPERATURE : Ta (°C)
250
0
ILLUMINANCE : E (Lx)
ambient temperature
2010.07 - Rev.A
500
25
Data Sheet
750
50
1000
75
1250
100