EL-PT908-7C Everlight Electronics CO., LTD, EL-PT908-7C Datasheet - Page 3

Photodetector Transistors Phototransistor

EL-PT908-7C

Manufacturer Part Number
EL-PT908-7C
Description
Photodetector Transistors Phototransistor
Manufacturer
Everlight Electronics CO., LTD
Type
Phototransistorr
Datasheet

Specifications of EL-PT908-7C

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
30 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Package / Case
Side Looker
Wavelength
860 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings (Ta=25℃)
Notes: *1:Soldering time≦5 seconds.
Electro-Optical Characteristics (Ta=25℃)
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature
Power
below)
25℃ Free Air Temperature
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
Everlight Electronics Co., Ltd.
Parameter
Dissipation
Parameter
at
(or
Symbol
V
I
λ
I
CE)(sat)
λp
C(on)
CEO
Symbol
t
t
r
f
0.5
V
V
Topr
Tstg
Tsol
Pc
I
CEO
ECO
C
http:\\www.everlight.com
Ee=0.555mW/cm
Ee=1mW/cm
Ee=0mW/cm
RL=1000Ω
Condition
V
I
V
I
V
-25 ~ +85℃
-40 ~ +85℃
C
C
CE
CE
CE
=2mA
=1mA
---
---
Rating
=20V
=5V
=5V
260
30
20
75
5
2
2
2
Min.
0.78
400
---
---
---
---
---
Units
mW
mA
V
V
Typ. Max. Units
860
---
15
15
---
---
Rev 1.2
Device No:DPT-090-081
1100
3.12
100
0.4
---
---
---
μS
mA
nA
nm
nm
PT908-7C
V
Page: 3 of 6

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