OP522 Optek, OP522 Datasheet - Page 3

• Manufacturer Part Number: OP522
• Description: Photodetector Transistors Phototrans Clear
• Manufacturer: Optek
• Type: Silicon Phototransistorr

Specifications of OP522

• Maximum Power Dissipation: 75 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Collector-emitter Breakdown Voltage: 30 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Package / Case: 1206
• Wavelength: 890 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SMT Silicon Phototransistor
OP522
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] FAX: [phone] [e-mail] www.optekinc.com
100%
80%
60%
40%
20%
1000
0%
100
10
1
0
-25
-90
Conditions: E
V
CE
= 10V
Collector-Emitter Dark Current
-60
Angular Position (Degrees)
0
Relative Response vs.
e
= 0 mW/cm
Temperature—(°C)
vs. Temperature
Angular Position
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
-30
25
2
0
50
30
60
75
100
90
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
Relative On-State Collector Current
vs. Collector-Emitter Voltage
Collector-Emitter Voltage (V)
0.1
0.2
0.3
0.4
6 mW/cm
5 mW/cm
4 mW/cm
3 mW/cm
2 mW/cm
1 mW/cm
Issue A
0.5
2
2
2
2
2
2
Page 3 of 4
12/2010