TEMT1020 Vishay, TEMT1020 Datasheet - Page 2

• Manufacturer Part Number: TEMT1020
• Description: Photodetector Transistors NPN Phototransistor
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of TEMT1020

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 200 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SMD
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Msl: MSL 2 - 1 Year
• Light Current: 7.0mA
• Dark Current: 200nA
• C-e Breakdown Voltage: 70V
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 950nm
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81554
Rev. 1.6, 09-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Collector emitter voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Collector light current
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8304
21167
10
10
10
10
10
120
100
80
60
40
20
4
3
2
1
0
20
0
10
R
T
thJA
T
amb
amb
20 30 40
= 400 K/W
- Ambient Temperature (°C)
40
- Ambient Temperature (°C)
V
CE
Silicon NPN Phototransistor, RoHS Compliant
= 20 V
60
50 60 70 80
For technical questions, contact: [e-mail]
V
V
V
S
S
S
E
E
V
80
e
= 5 V, I
= 5 V, I
= 5 V, I
e
TEMT1000, TEMT1020, TEMT1030, TEMT1040
CE
= 1 mW/cm
= 1 mW/cm
TEST CONDITION
= 5 V, f = 1 MHz, E = 0
V
CE
90 100
I
C
C
C
C
I
V
= 20 V, E = 0
C
100
= 5 mA, R
= 5 mA, R
= 5 mA, R
CE
= 0.1 mA
= 1 mA
= 5 V
2
2
, λ = 950 nm,
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
SYMBOL
Fig. 3 - Relative Collector Current vs. Ambient Temperature
V
V
C
I
λ
CEO
CEsat
t
t
I
CEO
CEO
λ
f
ϕ
0.5
on
off
ca
c
p
94 8239
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
MIN.
70
2
T
V
E
λ
amb
CE
e
= 1 mW/cm
20
= 950 nm
= 5 V
- Ambient Temperature (°C)
Vishay Semiconductors
730 to 1000
40
TYP.
± 15
880
180
2.0
2.3
7.0
2
1
3
60
MAX.
200
0.3
80
www.vishay.com
100
UNIT
deg
kHz
mA
nm
nm
nA
pF
µs
µs
V
V
477