QSE773 Fairchild Semiconductor, QSE773 Datasheet - Page 2
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QSE773
Manufacturer Part Number
QSE773
Description
Photodiodes PHOTO DIODE TRANS.
Manufacturer
Fairchild Semiconductor
Type
Plastic Silicon PIN Photodioder
Datasheet
1.QSE773.pdf
(4 pages)
Specifications of QSE773
Photodiode Material
Silicon
Peak Wavelength
940 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
150 mW
Maximum Light Current
30 uA
Maximum Dark Current
30 nA
Maximum Rise Time
50 ns
Maximum Fall Time
50 ns
Package / Case
Side Looker
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
32V
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
30uA
Rise Time
50ns
Fall Time
50ns
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
Side Looker
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSE773
Manufacturer:
OSRAM
Quantity:
10 000
Part Number:
QSE773
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
QSE773E3R0
Manufacturer:
ON/安森美
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FODMXXX Rev. 1.0.0
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
3. Derate power dissipation linearly 2.50mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or Isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron tip 1/16” (1.6 mm) from housing.
7. As long as leads are not under any stress or spring tension.
Electrical Characteristics
Notes:
8. Light source is an GaAs LED which has a peak emission wavelength of 940nm.
9. All measurements made under pulse conditions.
Symbol
Symbol
T
T
I
T
T
R(D)
SOL-F
I
I
V
SOL-I
V
P
PH
SC
OPR
C
STG
PK
t
t
r
R
f
R
D
Reverse Voltage
Dark Reverse Current
Peak Sensitivity
Reception Angle at 1/2 Power
Photo Current
Short Circuit Current
Capacitance
Rise Time
Fall Time
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Reverse Voltage
Power Dissipation
Parameter
(8)
(3)
8)
(T
Parameters
A
(T
= 25°C)
A
(4)(5)(6)(7)
= 25°C unless otherwise noted)
(4)(5)(7)
I
V
V
E
E
V
V
V
R
R
R
e
e
R
R
R
= 0.1mA
= 1.0mW/cm
= 1.0mW/cm
= 10V
= 5V
= 3V
= 5V, R
= 5V, R
Test Conditions
2
L
L
= 1k
= 1k
2
2
, V
CE
= 5V
Min.
260 for 10 sec
32
30
240 for 5 sec.
-40 to +85
-40 to +85
Value
150
32
Typ.
940
±60
18
25
50
50
Max.
30
www.fairchildsemi.com
Units
mW
Units
°C
°C
°C
°C
V
nm
nA
µA
µA
pF
ns
ns
V
°