BPX 48 OSRAM Opto Semiconductors Inc, BPX 48 Datasheet - Page 5

• Manufacturer Part Number: BPX 48
• Description: Photodiodes PHOTODIODE (differential) DIL
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 48

• Photodiode Material: Silicon
• Peak Wavelength: 900 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 10 V
• Maximum Power Dissipation: 50 mW
• Maximum Light Current: 24 uA
• Maximum Dark Current: 100 nA
• Maximum Rise Time: 500 ns
• Maximum Fall Time: 500 ns
• Package / Case: PDIP-4
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Polarity: Forward
• Reverse Breakdown Voltage: 10V
• Forward Voltage: 1.3V
• Responsivity: 0.55A/W
• Dark Current (max): 100nA
• Power Dissipation: 50mW
• Light Current: 24uA
• Rise Time: 500ns
• Fall Time: 500ns
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 4
• Package Type: PDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0017S001

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2007-04-04
1.10 (0.043)
Radiant sensitive area
Approx. weight 0.1 g
Diode system
2.54 (0.100)
0.09 (0.004)
0.4 (0.016)
4.05 (0.159)
3.75 (0.148)
0.8 (0.031)
0.6 (0.024)
0.5 (0.020)
0.3 (0.012)
2.0 (0.079) x 0.67 (0.026)
anode
0.7 (0.028)
0.5 (0.020)
2.54 (0.100)
cathode
5
7.8 (0.307)
7.4 (0.291)
0...5˚
7.62 (0.300) spacing
6.6 (0.260)
6.3 (0.248)
GEOY6638
BPX 48