QSB34ZR Fairchild Semiconductor, QSB34ZR Datasheet - Page 2

• Manufacturer Part Number: QSB34ZR
• Description: Photodiodes Infrared Photodiode SMD Si Pin
• Manufacturer: Fairchild Semiconductor
• Type: Silicon Infrared PIN Photodioder

Specifications of QSB34ZR

• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 37 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 50 ns
• Maximum Fall Time: 50 ns
• Package / Case: PLCC-2
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 37uA
• Rise Time: 50ns
• Fall Time: 50ns
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor Corporation
QSB34GR, QSB34ZR, QSB34CGR, QSB34CZR Rev. 1.0.3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Note:
1. Soldering time ≤ 5 seconds
Electrical/Optical Characteristics
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Parameter
I
λ
λ
R(D)
I
V
PH
Θ
C
t
0.5
PK
t
R
r
f
Symbol
T
T
T
V
P
OPR
STG
SOL
R
C
Reverse Voltage
Dark Reverse Current
Peak Sensitivity
Reception Angle @ 1/2 Power
Photo Current
Capacitance
Rise Time
Fall Time
Spectral Sensitivity
QSB34GR, QSB34ZR
QSB34CGR, QSB34CZR
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature
Reverse Voltage
Power Dissipation at (or below) 25°C
Free Air Temperature
(T
A
= 25°C unless otherwise specified)
I
V
V
Ee = 1.0mW/cm
V
V
V
R
R
R
R
R
R
= 0.1mA
(T
= 10V
= 5V
= 3V
= 10V, R
= 10V, R
A
Test Conditions
=25°C unless otherwise specified)
L
L
= 50 Ω
= 50 Ω
2
2
, V
CE
= 5V
(4)
Min.
730
400
32
25
-25 to +85
-40 to +85
Rating
260
150
32
Typ.
940
±60
37
25
50
50
Max.
1100
1100
30
www.fairchildsemi.com
Unit
mW
°C
°C
°C
V
Units
nm
nm
nA
µA
pF
ns
ns
V
°