BPW 34 OSRAM Opto Semiconductors Inc, BPW 34 Datasheet - Page 5
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BPW 34
Manufacturer Part Number
BPW 34
Description
Photodiodes PHOTODIODE T/H
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet
1.BPW_34_S-Z.pdf
(8 pages)
Specifications of BPW 34
Photodiode Material
Silicon
Peak Wavelength
850 nm
Half Intensity Angle Degrees
60 deg
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
150 mW
Maximum Light Current
80 uA
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
DIL-2
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Reverse
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.62A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
80uA
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
DIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0073
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2007-05-23
BPW 34
BPW 34 S
4.0 (0.157)
3.7 (0.146)
0.6 (0.024)
0.4 (0.016)
0.5 (0.020)
0.3 (0.012)
Cathode marking
4.5 (0.177)
4.3 (0.169)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
0.8 (0.031)
0.6 (0.024)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
6.7 (0.264)
6.2 (0.244)
0.6 (0.024)
0.4 (0.016)
5.4 (0.213)
4.9 (0.193)
4.5 (0.177)
4.3 (0.169)
Chip position
5
1.8 (0.071)
Cathode lead
1.1 (0.043)
0.9 (0.035)
0 ... 5˚
5.08 (0.200)
spacing
BPW 34, BPW 34 S, BPW 34 SR
±0.2 (0.008)
GEOY6863
Chip position
GEOY6643