BPW34 Vishay, BPW34 Datasheet - Page 2

• Manufacturer Part Number: BPW34
• Description: Photodiodes 65 Degree 215mW
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder
• Series: -r

Specifications of BPW34

• Lens Type: Clear Epoxy
• Photodiode Material: Silicon
• Peak Wavelength: 900 nm
• Half Intensity Angle Degrees: 65 deg
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 75 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Package / Case: TO-5
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Wavelength Typ: 900nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: Top View
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Mounting Type: Through Hole
• Leaded Process Compatible: Yes
• Active Area: 7.5mm2
• Breakdown Voltage Vbr: 60V
• Diode Type: Photodiode
• Rohs Compliant: Yes
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 60V
• Dark Current (max): 30nA
• Power Dissipation: 215mW
• Light Current: 75uA
• Rise Time: 100ns
• Fall Time: 100ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Mini Flat
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81521
Rev. 2.0, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
k
o
60
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: [e-mail]
V
R
= 10 V
V
V
R
R
80
E
E
E
E
E
= 10 V, R
= 10 V, R
V
V
e
e
e
e
e
R
R
= 1 mW/cm
V
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
E
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
I
R
A
V
= 10 V, λ = 950 nm
R
= 100 µA, E = 0
= 1 klx, V
100
= 10 V, E = 0
E
V
L
L
A
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 1 klx
= 5 V
2
2
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
R
= 5 V
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
NEP
TK
λ
C
C
V
I
I
I
λ
(BR)
I
I
ϕ
t
ro
ra
ra
0.1
t
k
k
r
f
D
D
o
p
Vo
Ik
94 8416
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
40
T
amb
20
Vishay Semiconductors
- Ambient Temperature (°C)
430 to 1100
4 x 10
BPW34, BPW34S
TYP.
λ = 950 nm
- 2.6
± 65
40
350
900
100
100
0.1
70
25
70
47
75
50
V
2
R
= 5 V
-14
60
MAX.
30
40
80
www.vishay.com
100
W/√Hz
mV/K
UNIT
%/K
deg
mV
nm
nm
nA
pF
pF
µA
µA
µA
µA
ns
ns
V
387