FOD817AS Fairchild Semiconductor, FOD817AS Datasheet - Page 4

• Manufacturer Part Number: FOD817AS
• Description: Transistor Output Optocouplers Opto Phototransistor Output SM-DIP4
• Manufacturer: Fairchild Semiconductor

Specifications of FOD817AS

• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 200 mV
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 160 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP SMD Black
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FOD817AS_NL

©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Electrical Characteristics
Isolation Characteristics
*Typical values at T
Notes:
1. Current Transfer Ratio (CTR) = I
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol
R
C
V
ISO
ISO
ISO
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
Characteristic
(3)
A
= 25°C
C
/I
(T
F
A
x 100%.
FOD814,
FOD817
FOD814,
FOD817
FOD814,
FOD817
= 25°C Unless otherwise specified.) (Continued)
Device
f = 60Hz, t = 1 min,
I
V
V
I-O
Test Conditions
I-O
I-O
= 500VDC
= 0, f = 1 MHz
2µA
4
5x10
5000
Min.
10
1x10
Typ.*
0.6
11
Max.
1.0
www.fairchildsemi.com
Vac(rms)
Units
pf