4N38A Vishay, 4N38A Datasheet - Page 2

• Manufacturer Part Number: 4N38A
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR >20%
• Manufacturer: Vishay

Specifications of 4N38A

• Isolation Voltage: 5000 Vrms
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 30 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 80V
• Opto Case Style: DIP
• No. Of Pins: 6
• Peak Reflow Compatible (260 C): No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant

4N35-X, 4N36-X, 4N37-X, 4N38
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
154
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Creepage
Clearance
Isolation thickness between emitter
and detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Junction capacitance
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown
voltage
Emitter collector breakdown
voltage
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
(2)
(2)
(2)
(2)
For technical questions, contact:
I
F
DIN IEC 112/VDE 0303, part 1
= 10 mA, T
Optocoupler, Phototransistor Output,
V
V
V
V
TEST CONDITION
distance to seating plane
IO
R
R
max.10 s dip soldering:
IO
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 500 V, T
TEST CONDITION
I
= 500 V, T
I
E
F
I
V
C
= 100 µA
= 10 mA
R
= 1 mA
(1)
≥ 1.5 mm
= 6 V
t ≤ 10 µs
(1)
t ≤ 1 ms
amb
with Base Connection
= - 55 °C
amb
amb
= 100 °C
= 25 °C
[e-mail]
PART
4N35
4N36
4N37
4N38
SYMBOL
SYMBOL
V
V
P
P
T
BV
BV
BV
BV
BV
I
V
T
T
R
R
FSM
V
CEO
EBO
I
I
amb
I
diss
diss
T
ISO
stg
C
C
C
sld
F
IO
IO
V
V
C
R
I
j
R
CEO
CEO
CEO
CEO
ECO
O
F
F
j
MIN.
0.9
30
30
30
80
7
- 55 to + 150
- 55 to + 100
VALUE
5300
≥ 0.4
10
10
100
100
150
175
100
260
2.5
≥ 7
≥ 7
60
70
50
6
7
12
11
TYP.
1.3
1.3
0.1
50
25
Document Number: 83717
MAX.
1.5
1.7
Rev. 1.7, 13-Oct-09
10
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
V
A
V
V
Ω
Ω
UNIT
pF
µA
pF
V
V
V
V
V
V
V