MOCD208M Fairchild Semiconductor, MOCD208M Datasheet - Page 3

• Manufacturer Part Number: MOCD208M
• Description: Transistor Output Optocouplers SO-8 DUAL CH PHOTO
• Manufacturer: Fairchild Semiconductor

Specifications of MOCD208M

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 2
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 2500 Vrms
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.55 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOIC-8 Narrow
• Number Of Elements: 2
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.55V
• Forward Current: 60mA
• Collector-emitter Voltage: 70V
• Package Type: SOIC W
• Collector Current (dc) (max): 150mA
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MOCD208M_NL

©2003 Fairchild Semiconductor Corporation
MOCD207M, MOCD208M Rev. 1.0.6
Electrical Characteristics
*Typical values at T
Note:
1. Input-Output Isolation Voltage, V
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. Always design to the specified minimum/maximum electrical limits (where applicable).
4. Current Transfer Ratio (CTR) = I
Symbol
EMITTER
DETECTOR
COUPLED
V
V
V
(BR)CEO
(BR)CEO
CE (sat)
R
C
I
I
CTR
V
C
CEO
CEO
V
t
t
I
C
ISO
ISO
ISO
on
off
t
t
CE
R
r
f
F
Input Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Capacitance
Current Transfer Ratio,
Collector to Emitter
Collector-Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
Isolation Resistance
Isolation Capacitance
A
= 25°C
Parameter
(4)
(2)
(2)
(1)(2)
C
ISO
/I
(T
F
, is an internal device dielectric breakdown rating.
x 100%.
A
= 25°C unless otherwise specified)
I
V
V
V
I
I
f = 1.0 MHz, V
I
I
I
I
R
I
R
I
R
I
R
f = 60Hz, t = 1 min.,
I
V
V
F
C
E
F
F
C
C
C
C
C
I-O
R
CE
CE
L
L
L
L
I-O
I-O
= 30mA
= 10mA, V
= 1mA, V
= 100µA
= 100µA
= 2.0mA, I
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
Test Conditions
= 100
= 100
= 100
= 100
= 6.0V
= 10V, T
= 10V, T
= 500V
= 0V, f = 1MHz
2µA
CE
A
A
3
CE
F
CC
CC
CC
CC
CE
= 25°C
= 100°C
= 5V
= 10mA
= 5V
= 10V,
= 10V,
= 10V,
= 10V,
= 0V
MOCD207M
MOCD208M
MOCD207M
MOCD208M
Device
(3)
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
All
Min. Typ.* Max.
2500
10
100
7.0
70
40
34
13
11
0.001
1.25
100
1.0
1.0
7.0
3.0
2.8
1.6
2.2
0.2
18
10
1.55
100
200
125
0.4
50
www.fairchildsemi.com
Vac(rms)
Unit
µA
pF
nA
µA
pF
pF
µs
µs
µs
µs
%
V
V
V
V