TCET1100G Vishay, TCET1100G Datasheet - Page 3

• Manufacturer Part Number: TCET1100G
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR 50-600%
• Manufacturer: Vishay

Specifications of TCET1100G

• Isolation Voltage: 5000 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Mounting Type: Through Hole
• Approval Bodies: VDE, CSA, BSI EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Coupler
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem-
peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
* For 2 layer FR4 board (4" x 3" x 0.062)
Document Number 83503
Rev. 2.2, 05-Sep-06
Isolation test voltage (RMS)
Operating ambient temperature
range
Storage temperature range
Soldering temperature
LED Power dissipation
Output Power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, Junction Emitter to Board
Thermal resistance, Junction Emitter to Case
Thermal resistance, Junction Detector to Board
Thermal resistance, Junction Detector to Case
Thermal resistance, Junction Emitter to Junction Detector
Thermal resistance, Board to Ambient*
Thermal resistance, Case to Ambient*
Parameter
T
19996
JD
θ
DB
Parameter
θ
DC
t = 1 min
2 mm from case t ≤ 10 s
T
T
T
B
C
A
θ
DE
T
θ
θ
A
Test condition
CA
BA
θ
Package
EC
θ
EB
T
JE
at 25 °C
at 25 °C
Test condition
Symbol
TCET1100/TCET1100G
T
V
T
T
amb
ISO
stg
sld
- 40 to + 100
- 55 to + 125
Symbol
Vishay Semiconductors
Value
T
T
5000
P
P
θ
θ
θ
θ
θ
θ
θ
260
jmax
jmax
diss
diss
EC
DB
DC
ED
CA
EB
BA
Value
4041
100
150
125
125
173
149
111
127
173
197
www.vishay.com
V
Unit
RMS
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mW
mW
°C
°C
3