MOC217M Fairchild Semiconductor, MOC217M Datasheet - Page 2

• Manufacturer Part Number: MOC217M
• Description: Transistor Output Optocouplers SO-8 PHOTO TRANS
• Manufacturer: Fairchild Semiconductor

Specifications of MOC217M

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 2500 Vrms
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOIC-8 Narrow
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.3V
• Forward Current: 60mA
• Collector-emitter Voltage: 30V
• Package Type: SOIC W
• Collector Current (dc) (max): 150mA
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MOC217M_NL

©2005 Fairchild Semiconductor Corporation
MOC215M, MOC216M, MOC217M Rev. 1.0.1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Isolation Surge Voltage, V
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
EMITTER
DETECTOR
TOTAL DEVICE
Symbol
I
V
V
V
F
V
T
V
P
P
P
CEO
CBO
ECO
T
I
I
(pk)
ISO
stg
F
C
A
R
D
D
D
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120pps)
Reverse Voltage
LED Power Dissipation @ T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
Ambient Operating Temperature Range
Storage Temperature Range
Derate above 25°C
Derate above 25°C
Derate above 25°C
ISO
, is an internal device dielectric breakdown rating.
(T
A
= 25°C Unless otherwise specified)
Rating
A
= 25°C
A
= 25°C
A
= 25°C
2
(1)(2)
-40 to +100
-40 to +125
Value
2500
1.76
2.94
150
150
250
1.0
6.0
0.8
7.0
60
90
30
70
Vac(rms)
www.fairchildsemi.com
mW/°C
mW/°C
mW/°C
Unit
mW
mW
mW
mA
mA
°C
°C
A
V
V
V
V